? 2004 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1ma 800 v v gs(th) v ds = v gs , i d = 8ma 2.5 5.0 v i gss v gs = 30 v, v ds = 0 200 na i dss v ds = v dss t j = 25 c 50 a v gs = 0 v t j = 125 c 3 ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 0.15 ? note 1 ds99005b(09/04) plus 264 tm (ixfb) g = gate d = drain s = source tab = drain s g d (tab) hiperfet tm power mosfets n-channel enhancement mode avalanche rated, low q g , low intrinsic r g high dv/dt, low t rr features z double metal process for low gate resistance z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect z fast intrinsic rectifier applications z dc-dc converters z switched-mode and resonant-mode power supplies, >500khz switching z dc choppers z pulse generation z laser drivers advantages z plus 264 tm package for clip or spring mounting z space savings z high power density ixfb 50n80q2 v dss = 800 v i d25 = 50 a r ds(on) = 0.15 ? ? ? ? ? t rr 300 ns symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 800 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c50a i dm t c = 25 c, pulse width limited by t jm 200 a i ar t c = 25 c50a e ar t c = 25 c60mj e as t c = 25 c 5.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 20 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 890 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c f c mounting force 30...120/7.5...27 n/lb weight 10 g
ixys reserves the right to change limits, test conditions, and dimensions. IXFB50N80Q2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 ? i d25 note 1 32 48 s c iss 7200 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1200 pf c rss 230 pf t d(on) 26 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 25 ns t d(off) r g = 1 ? (external) 60 ns t f 13 ns q g(on) 260 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 56 nc q gd 120 nc r thjc 0.14 k/w r thck 0.13 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 50 a i sm repetitive; 200 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr 300 ns q rm 1.1 c i rm 8a i f = 25a -di/dt = 100 a/ s v r = 100 v terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 264 tm outline note: 1. pulse test, t 300 s, duty cycle d 2 % ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463
? 2004 ixys all rights reserved IXFB50N80Q2 fig. 2. extended output characteristics @ 25 deg. c 0 15 30 45 60 75 90 105 0 4 8 12 16 20 24 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 5v 6v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 0 4 8 12162024 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 0246810 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 4 . r ds(on) normalized to i d25 v alue vs. junction temperature 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized i d = 50a i d = 25a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to i d25 value vs. i d 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 0 20406080100 i d - amperes r ds(on) - normalized t j = 125 o c t j = 25 o c v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. IXFB50N80Q2 fig. 7. input admittance 0 10 20 30 40 50 60 70 3 3.5 4 4.5 5 5.5 6 6.5 v gs - volts i d - amperes t j = -40 o c 25 o c 125 o c fig. 8. transconductance 0 20 40 60 80 100 0 153045607590 i d - am peres g fs - siemens t j = 25 o c t j = 125 o c tj = -40 o c fig. 9. source current vs. source-to- drain voltage -150 -120 -90 -60 -30 0 -1.4 -1.2 -1 -0.8 -0.6 -0.4 v sd - volts i s - amperes t j = 125 o c t j = 25 o c fig. 10. gate charge 0 2 4 6 8 10 0 40 80 120 160 200 240 280 q g - nanocoulom bs v gs - volts v ds = 400v i d = 25a i g = 10ma fig. 11. capacitance 100 1000 10000 010203040 v ds - volts capacitance - pf cis s cos s crs s f=1mhz fig. 12. maxim um transient therm al resistance 0.01 0.1 1 1 10 100 1000 puls e width - m illis e conds r (th)jc - (oc/w)
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